Electrical Coupling of Monolithic 3D Inverters (M3INVs): MOSFET and Junctionless FET

Device Coupling Effects of Monolithic 3D Inverters

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness TILD and dielectric constant εr of the inter-layer distance (ILD), the doping concentration Nd (Na), and length Lg of the channel, and the side-wall length LSW where t...

3D monolithic integration: Technological challenges and electrical results

Article history: Available online 19 November 2010

Electron Mobility Transistor Direct-Coupled FET Logic Inverters

The monolithic integration of enhancementand depletion-mode (Eand D-mode) high electron mobility transistors (HEMTs) lattice-matched to InP is of interest in the area of circuits for low power, high speed communications. When compared to circuits implemented in depletion-mode @-mode) only technology, circuits implemented in ED-mode technology enjoy a number of advantages. D-mode only circuits r...

Monolithic DC-DC Converter Analysis And Mosfet Gate Voltage Optimization

— The design of an efficient monolithic buck converter is presented in this paper. A low swing MOSFET gate drive technique is proposed that improves the efficiency characteristics of a DC-DC converter. A model of the parasitic impedances of a buck converter is developed. With this model, a design space is described which characterizes the integration of both active and passive devices of a buck...

Interlayer coupling effect on the performance of monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness